A NEW VERTICAL DOUBLE DIFFUSED MOSFET - THE SELF-ALIGNED TERRACED-GATE MOSFET

被引：22
|
作者：
UEDA, D
TAKAGI, H
KANO, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期
关键词：
D O I：
10.1109/T-ED.1984.21543
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：416 / 420
页数：5
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