OPTIMIZING THE RELIABILITY OF POWER MOSFETS

被引：0
|
作者：
PELLY, B
机构：
来源：
ELECTRONIC ENGINEERING | 1984年 / 56卷 / 693期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：63 / &
相关论文
共 50 条
  • [1] OPTIMISING THE RELIABILITY OF POWER MOSFETS.
    Pelly, Brian
    Electronic Engineering (London), 1984, 56 (693): : 63 - 66
  • [2] Performance and Reliability of SiC Power MOSFETs
    Lichtenwalner, Daniel J.
    Hull, Brett
    Pala, Vipindas
    Van Brunt, Edward
    Ryu, Sei-Hyung
    Sumakeris, Joe J.
    O'Loughlin, Michael J.
    Burk, Albert A.
    Allen, Scott T.
    Palmouri, John W.
    MRS ADVANCES, 2016, 1 (02): : 81 - 89
  • [3] Performance and Reliability of SiC Power MOSFETs
    Daniel J. Lichtenwalner
    Brett Hull
    Vipindas Pala
    Edward Van Brunt
    Sei-Hyung Ryu
    Joe J. Sumakeris
    Michael J. O’Loughlin
    Albert A. Burk
    Scott T. Allen
    John W. Palmour
    MRS Advances, 2016, 1 (2) : 81 - 89
  • [4] Reliability of Commercially Available SiC Power MOSFETs
    Lelis, A. J.
    Green, R.
    El, M.
    Habersat, D. B.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 79 - 85
  • [5] Reliability Studies of SiC Vertical Power MOSFETs
    Lichtenwalner, Daniel J.
    Hull, Brett
    Van Brunt, Edward
    Sabri, Shadi
    Gajewski, Donald A.
    Grider, Dave
    Allen, Scott
    Palmour, John W.
    Akturk, Akin
    McGarrity, James
    2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
  • [6] Key Reliability Issues for SiC Power MOSFETs
    Lelis, A.
    Habersat, D.
    Green, R.
    Mooro, E.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 87 - 93
  • [7] Reliability aspects of high temperature power MOSFETs
    Manca, JV
    Wondrak, W
    Schaper, W
    Croes, K
    De Ceuninck, W
    Dieval, B
    Hartnagel, HL
    D'Olieslaeger, M
    De Schepper, L
    MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1679 - 1682
  • [8] Reliability and stability of SiC power MOSFETs and Next-Generation SiC MOSFETs
    Hull, B.
    Allen, S.
    Zhang, Q.
    Gajewski, D.
    Pala, V
    Richmond, J.
    Ryu, S.
    O'Loughlin, M.
    Van Brunt, E.
    Cheng, L.
    Burk, A.
    Casady, J.
    Grider, D.
    Palmour, J.
    2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 138 - 141
  • [9] Body Diode Reliability of Commercial SiC Power MOSFETs
    Kang, Minseok
    Yu, Susanna
    Xing, Diang
    Liu, Tianshi
    Salemi, Arash
    Booth, Kristen
    Zhu, Shengnan
    White, Marvin H.
    Agarwal, Anant K.
    2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 416 - 419
  • [10] Implications for Robust Reliability Testing of Power SiC MOSFETs
    Green, R.
    Lelis, A. J.
    Habersat, D.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 215 - 224
12345