EFFECT OF NF3 ON THE DIRECT THERMAL NITRIDATION OF SILICON

被引：2
|
作者：
MCCLUSKEY, FP
JACCODINE, RJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期
关键词：
D O I：
10.1149/1.2097330
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2328 / 2331
页数：4
相关论文
共 50 条
  • [1] FLUORINE-ENHANCED THERMAL-OXIDATION OF SILICON IN THE PRESENCE OF NF3
    MORITA, M
    KUBO, T
    ISHIHARA, T
    HIROSE, M
    APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1312 - 1314
  • [2] THERMODYNAMIC CONSIDERATIONS IN THE DIRECT THERMAL NITRIDATION OF SILICON
    MONKOWSKI, JR
    PERNG, SY
    NEMETZ, JA
    TRESSLER, RE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C326 - C326
  • [3] Thermal decomposition of NF3 with various oxides
    Vileno, E
    LeClair, MK
    Suib, SL
    Cutlip, MB
    Galasso, FS
    Hardwick, SJ
    CHEMISTRY OF MATERIALS, 1996, 8 (06) : 1217 - 1221
  • [4] Simulation of silicon etching in NF3 plasma reactor
    Swami, H. L.
    Mehta, V
    Kumar, Yogendra
    Jariwala, Chetan
    Kumar, Rajesh
    PRAMANA-JOURNAL OF PHYSICS, 2023, 97 (03):
  • [5] Simulation of silicon etching in NF3 plasma reactor
    H L Swami
    V Mehta
    Yogendra Kumar
    Chetan Jariwala
    Rajesh Kumar
    Pramana, 97
  • [6] Enhancement of porous silicon photoluminescence by NF3/UV photo-thermal surface treatment
    Stolyarova, S
    El-Bahar, A
    Nemirovsky, Y
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (17) : L90 - L92
  • [7] Effect of anode materials on NF3 formation
    Tasaka, A
    Kawagoe, T
    Takuwa, A
    Yamanaka, M
    Tojo, T
    Aritsuka, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) : 1160 - 1164
  • [8] THERMAL-ANALYSIS OF THE DIRECT NITRIDATION OF SILICON TO SI3N4
    BRAUN, G
    BODEN, G
    HENKEL, K
    ROSSBACH, H
    JOURNAL OF THERMAL ANALYSIS, 1988, 33 (02): : 479 - 485
  • [9] Questioning NF3
    Voith, Melody
    CHEMICAL & ENGINEERING NEWS, 2008, 86 (28) : 6 - 6
  • [10] Porous silicon light emission enhancement by NF3/UV photo-thermal surface treatment
    Stolyarova, S
    El-Bahar, A
    Nemirovsky, Y
    ELECTRO-OPTICS AND MICROELECTRONICS, PROCEEDINGS, 2000, 14 : 232 - 235
12345