COMPARISON OF FAST ELECTRON AND THERMAL ANNEALING OF PROTON BOMBARDED SILICON - X-RAY AND IR SPECTROSCOPY STUDY

被引：2
|
作者：
BISKUPSKA, K
TATARKIEWICZ, J
WIETESKA, K
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期
关键词：
D O I：
10.1002/pssa.2210790142
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K13 / &
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