EVIDENCE FOR IMPURITY STATES ASSOCIATED WITH HIGH-ENERGY CONDUCTION-BAND EXTREMA IN N-CDTE

被引：37

作者：

FOYT, AG

HALSTED, RE

PAUL, W

机构：

来源：

PHYSICAL REVIEW LETTERS | 1966年 / 16卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.16.55

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：55 / &

共 19 条

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[3]

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[4]

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[5]

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PHYSICAL REVIEW, 1963, 131 (05) :2070-&

[7]

FOYT AG, TO BE PUBLISHED

[8]

FOYT AG, 1965, SOLID STATE DEVICE R

[9] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .1. ARSENIC, INDIUM, AND ALUMINUM IN SILICON [J].

HOLLAND, MG ;

PAUL, W .

PHYSICAL REVIEW, 1962, 128 (01) :30-&

[10] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .3. GOLD IN GERMANIUM [J].

HOLLAND, MG ;

PAUL, W .

PHYSICAL REVIEW, 1962, 128 (01) :43-&

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