IMPROVED INTERFACE STATE DENSITY-FUNCTION IN METAL-SEMICONDUCTOR JUNCTIONS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：2

作者：

HALDER, NC ^{[1
]}

KIM, HW ^{[1
]}

DSOUZA, KM ^{[1
]}

BARNES, DE ^{[1
]}

HARTSON, SE ^{[1
]}

MOHAPATRA, R ^{[1
]}

机构：

[1] UNIV CENT FLORIDA,DEPT MATH,ORLANDO,FL 32816

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.348862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy (DLTS) measurements have been made to obtain the activation energy and capture cross section in Schottky diodes. Previous theories for interface state density (ISD) functions, which are derived for metal-semiconductor junctions, made approximations that were inappropriate. This paper derives improvements to the previous analysis and calculates ISD using the measured DLTS data. As for examples, Schottky diodes of Si, GaAs, and Al(x)Ga(1-x)As have been investigated with both methods. It has been found that the previously used method overestimated both the peak maximum position and peak height of the ISD.

引用

页码：6521 / 6525

页数：5

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