EFFECT OF SURFACE-STATES ON DEVICE AND INTERCONNECT ISOLATION IN GAAS-MESFET AND INP MISFET INTEGRATED CIRCUITS

被引：0

作者：

HASEGAWA, H ^{[1
]}

KITAGAWA, T ^{[1
]}

MASUDA, H ^{[1
]}

YANO, H ^{[1
]}

OHNO, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV, FAC ENGN, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C349 / C349

页数：1

共 21 条

[1] CHARACTERIZATION OF DEVICE ISOLATION IN GAAS-MESFET CIRCUITS BY BORON IMPLANTATION
CLAUWAERT, F
VANDAELE, P
BAETS, R
LAGASSE, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : 711 - 714
[2] PARASITIC EFFECTS OF SURFACE-STATES ON GAAS-MESFET CHARACTERISTICS AT LIQUID-NITROGEN TEMPERATURE
LIANG, CL
WONG, H
CHEUNG, NW
SATO, RN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1858 - 1860
[3] THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET
BARTON, TM
LADBROOKE, PH
SOLID-STATE ELECTRONICS, 1986, 29 (08) : 807 - 813
[4] COMPARISON OF AMPLIFIER GAIN ENHANCEMENT TECHNIQUES FOR GAAS-MESFET ANALOG INTEGRATED-CIRCUITS
LARSON, LE
TEMES, GC
LAW, S
ELECTRONICS LETTERS, 1986, 22 (21) : 1138 - 1139
[5] HIGH-SPEED ENHANCEMENT-MODE GAAS-MESFET INTEGRATED-CIRCUITS
MIZUTANI, T
KATO, N
ISHIDA, S
ASAI, K
SAKAKIBARA, Y
KOMATSU, K
OHMORI, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 329 - 333
[6] CHARACTERIZATION OF DEVICE ISOLATION IN GAAS MESFET-CIRCUITS BY BORON IMPLANTATION
CLAUWAERT, F
BAETS, R
LAGASSE, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C177 - C177
[7] SIMULATING THE EFFECTS OF SINGLE-EVENT AND RADIATION PHENOMENA ON GAAS-MESFET INTEGRATED-CIRCUITS
GEORGE, P
KO, PK
HU, CM
PROCEEDINGS OF THE IEEE 1989 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1989, : 223 - 226
[8] GAAS-MESFET DIGITAL INTEGRATED-CIRCUITS FABRICATED WITH LOW-TEMPERATURE BUFFER TECHNOLOGY
DELANEY, MJ
CHOU, CS
LARSON, LE
JENSEN, JF
DEAKIN, DS
BROWN, AS
HOOPER, WW
THOMPSON, MA
MCCRAY, LG
ROSENBAUM, SE
PROCEEDINGS OF THE IEEE 1989 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1989, : 519 - 522
[9] EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET
CHAKRABARTI, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) : 2578 - 2578
[10] EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET
MISHRA, S
SINGH, VK
PAL, BB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) : 2 - 10

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