METALLIC INTERFACES .2. INFLUENCE OF EXCHANGE-CORRELATION AND LATTICE POTENTIALS

被引：66
作者：
BENNETT, AJ
DUKE, CB
机构：
来源：
PHYSICAL REVIEW | 1967年 / 162卷 / 03期
关键词：
D O I：
10.1103/PhysRev.162.578
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：578 / +
页数：1
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共 35 条
[1]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[2]   VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM [J].
ALLEN, FG ;
FOWLER, AB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :107-114
[3]  
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[4]   Theory of the work function II. The surface double layer [J].
Bardeen, J .
PHYSICAL REVIEW, 1936, 49 (09) :0653-0663
[5]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[6]   SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J].
BENDANIEL, DJ ;
DUKE, CB .
PHYSICAL REVIEW, 1966, 152 (02) :683-+
[7]  
BENNETT AJ, TO BE PUBLISHED
[8]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[9]   EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].
CROWELL, CR ;
SZE, SM ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&
[10]   ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].
CROWELL, CR ;
HOWARTH, LE ;
SPITZER, WG ;
LABATE, EE .
PHYSICAL REVIEW, 1962, 127 (06) :2006-&
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