TRANSITION REGION BEHAVIOR IN ABRUPT, FORWARD-BIASED PN-JUNCTIONS

被引：19

作者：

GUCKEL, H ^{[1
]}

THOMAS, DC ^{[1
]}

IYENGAR, SV ^{[1
]}

DEMIRKOL, A ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT ELECT ENGN,MADISON,WI 53706

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1101(77)90106-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：647 / 652

页数：6

共 35 条

[1] A SINGULAR PERTURBATION ANALYSIS OF REVERSE BIASED PN-JUNCTIONS
SCHMEISER, C
SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 1990, 21 (02) : 313 - 326
[2] Simulation of forward bias injection in proton irradiated silicon pn-junctions
Keskitalo, N
Hallen, A
Masszi, F
Olsson, J
SOLID-STATE ELECTRONICS, 1996, 39 (07) : 1087 - 1092
[3] SUPPRESSION OF NOISE IN FORWARD-BIASED P-N JUNCTIONS
TARATUTA, AS
CHAIKA, GE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 677 - &
[4] RECOMBINATION CURRENT IN FORWARD-BIASED P-N-JUNCTIONS
SHUR, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) : 1564 - 1565
[5] Stacked Janus Device Concepts: Abrupt pn-Junctions and Cross-Plane Channels
Palsgaard, Mattias
Gunst, Tue
Markussen, Troels
Thygesen, Kristian Sommer
Brandbyge, Mads
NANO LETTERS, 2018, 18 (11) : 7275 - 7281
[6] ANALYTICAL SOLUTION OF BREAKDOWN CONDITION FOR ONESIDED ABRUPT PLANE, CYLINDRICAL AND SPHERICAL PN-JUNCTIONS
ALBRECHT, VH
MULLER, R
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1978, 32 (5-6): : 239 - 247
[7] CALCULATION OF NOISE LEVEL IN FORWARD-BIASED P-N JUNCTIONS
TARATUTA, AS
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (05): : 882 - &
[8] PHOTON GENERATION IN FORWARD-BIASED SILICON P-N-JUNCTIONS
ONG, TC
TERRILL, KW
TAM, S
HU, C
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) : 460 - 462
[9] EDGE LUMINESCENCE SPECTRUM OF FORWARD-BIASED GAP P-N JUNCTIONS
BUGARINOVICH, D
EVSTROPO.VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 358 - +
[10] Some analyses of potential profiles of forward-biased high-low junctions
1600, (75):

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