OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION - RF PERFORMANCES

被引:16
|
作者
FRISCOURT, MR
ROLLAND, PA
机构
关键词
D O I
10.1109/EDL.1983.25678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:135 / 137
页数:3
相关论文
共 11 条
  • [1] THEORETICAL INVESTIGATION OF N+-N-N+ GA0.47IN0.53AS TEOS UP TO THE MILLIMETER-WAVE RANGE
    FRISCOURT, MR
    ROLLAND, PA
    FAUQUEMBERGUE, R
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 434 - 436
  • [2] Performance characteristics of InP millimeter-wave N+-N--N+ Gunn devices
    Eisele, H
    Munns, GO
    Haddad, GI
    1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES, 1997, : 451 - 454
  • [3] MILLIMETER-RANGE EMISSION FROM HOT-ELECTRONS IN N-TYPE GE IN CROSSED ELECTRIC AND MAGNETIC-FIELDS
    CHEBOTAREV, AP
    MURZIN, VN
    JETP LETTERS, 1984, 40 (06) : 1005 - 1008
  • [4] Volume and integrated P-I-N modulators in millimeter frequency range
    Tecpoyotl-Torres, M
    Koshevaya, S
    Moroz, I
    Grimalsky, V
    Escobedo-Alatorre, J
    Sánchez-Mondragón, J
    MIKON-2004, VOL 1, CONFERENCE PROCEEDINGS, 2004, : 329 - 332
  • [5] Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range
    Volkov, VV
    Ivanova, VP
    Kuz'michev, YS
    Solov'ev, YV
    TECHNICAL PHYSICS LETTERS, 2005, 31 (07) : 611 - 612
  • [6] Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range
    V. V. Volkov
    V. P. Ivanova
    Yu. S. Kuz’michev
    Yu. V. Solov’ev
    Technical Physics Letters, 2005, 31 : 611 - 612
  • [7] A Modular Phase-Frequency Detector Design with ±2nπ Linear Range of Operation
    Luis Moura
    Assaad Borjak
    Circuits, Systems and Signal Processing, 2004, 23 : 273 - 283
  • [8] A modular phase-frequency detector design with ±2Nπ linear range of operation
    Moura, L
    Borjak, A
    CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2004, 23 (04) : 273 - 283
  • [9] Wideband MIMO Antenna Array Design for Future Mobile Devices Operating in the 5G NR Frequency Bands n77/n78/n79 and LTE Band 46
    Sim, Chow-Yen-Desmond
    Liu, Heng-You
    Huang, Ci-Jin
    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 2020, 19 (01): : 74 - 78
  • [10] Design of a fractional-N frequency synthesizer with third-order MASH sigma-delta modulator for RF transceivers
    Wang, H.-L. (wanghaolei@bit.edu.cn), 1600, Beijing Institute of Technology (33):