VERY BROAD-BAND DISTRIBUTED-AMPLIFIER TO 75-GHZ

被引：4
|
作者：
BRAUNSTEIN, J
TASKER, PJ
HULSMANN, A
SCHLECHTWEG, M
KOHLER, K
BRONNER, W
HAYDL, W
机构：
[1] Fraunhofer Institute for Applied Solid State Physics, 79108 Freiburg
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 10期
关键词：
AMPLIFIERS; TRAVELING WAVE SEMICONDUCTOR AMPLIFIERS; MODFETS;
D O I：
10.1049/el:19930569
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Distributed amplifiers were fabricated successfully with a gain of 8 dB +/- 1 dB in the frequency range 5-75 GHz measured on-wafer. The associated input and output matching is better than -10 dB. To the authors' knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.
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页码：851 / 853
页数：3
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