CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL (CCLPE) GROWTH OF INGAAS ON (100) INP

被引：13

|

作者：

ABULFADL, A

STEFANAKOS, EK

COLLIS, WJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 03期

关键词：

D O I：

10.1007/BF02654689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：559 / 573

页数：15

相关论文

共 50 条

[1] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP
SANKARAN, R
MOON, RL
ANTYPAS, GA
JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) : 271 - 280
[2] LIQUID-PHASE EPITAXIAL-GROWTH OF INP LAYERS
ZAKHARENKOV, LF
KUZMIN, IA
SAMORUKOV, BY
SOKOLOVA, MA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (07): : 20 - 23
[3] CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INGAASP
IYER, S
STEFANAKOS, EK
ABULFADL, A
COLLIS, WJ
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 162 - 168
[4] N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY
GROVES, SH
PLONKO, MC
APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1003 - 1004
[5] LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS
GROVES, SH
PLONKO, MC
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 81 - 87
[6] LIQUID-PHASE EPITAXIAL-GROWTH ON (111)IN PLANES OF INP
LOGAN, RA
HENRY, CH
MERRITT, FR
MAHAJAN, S
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5462 - 5463
[7] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS ON (100) INP SUBSTRATE
SUSA, N
YAMAUCHI, Y
ANDO, H
KANBE, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L17 - L20
[8] HIGH-PURITY LIQUID-PHASE EPITAXIAL-GROWTH OF INP
AMANO, T
KONDO, S
NAGAI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (11A): : 4878 - 4884
[9] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH
ANTYPAS, GA
APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65
[10] Liquid phase epitaxial growth process of InGaAs on InP with rare earth treatment
Gao, W
Berger, PR
Hunsperger, RG
Pamulapati, J
Lareau, RT
PHOTODETECTORS: MATERIALS AND DEVICES, 1996, 2685 : 171 - 177

← 1 2 3 4 5 →