94-GHZ TRANSISTOR AMPLIFICATION USING AN HEMT

被引：16
|
作者：
SMITH, PM
CHAO, PC
DUH, KHG
LESTER, LF
LEE, BR
机构：
[1] GE, Syracuse, NY, USA, GE, Syracuse, NY, USA
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 15期
关键词：
TRANSISTORS; FIELD EFFECT - Microwaves;
D O I：
10.1049/el:19860535
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transistor amplification at 94 GHz has been demonstrated. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3. 6 db and an output power of 3. 4 mw with 2 db gain.
引用
收藏
页码：780 / 781
页数：2
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