EFFECT OF OXYGEN ON IN0.53GA0.47AS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引:16
|
作者
STALL, RA
WUNDER, RJ
SWAMINATHAN, V
COX, HM
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] BELL COMMUN RES,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.96112
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:518 / 520
页数:3
相关论文
共 50 条
  • [1] MANGANESE AND GERMANIUM REDISTRIBUTION IN IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY
    SILBERG, E
    CHANG, TY
    CARIDI, EA
    EVANS, CA
    HITZMAN, CJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 178 - 181
  • [2] VERY HIGH-PURITY IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY
    MISHIMA, T
    TAKAHAMA, M
    UCHIDA, Y
    TANOUE, T
    TAKAHASHI, S
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (01) : 113 - 116
  • [3] Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxy
    Skuras, E
    Long, AR
    Vögele, B
    Holland, MC
    Stanley, CR
    Johnson, EA
    van der Burgt, M
    Yaguchi, H
    Singleton, J
    PHYSICAL REVIEW B, 1999, 59 (16) : 10712 - 10718
  • [4] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    MARSH, JH
    ROBERTS, JS
    CLAXTON, PA
    APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163
  • [5] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY
    CHANG, TY
    LEHENY, RF
    NAHORY, RE
    SILBERG, E
    BALLMAN, AA
    CARIDI, EA
    HARROLD, CJ
    ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58
  • [6] GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    LAMBERT, M
    HUET, D
    REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 757 - 761
  • [7] CHARACTERISTICS OF AN IN0.53GA0.47AS VERY SHALLOW JUNCTION GATE STRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY
    CHEN, CY
    CHO, AY
    GARBINSKI, PA
    CHENG, KY
    ELECTRON DEVICE LETTERS, 1982, 3 (01): : 15 - 17
  • [8] IN0.53GA0.47AS/INP MULTIQUANTUM WELL LASERS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (MOMBE)
    SUGIURA, H
    NOGUCHI, Y
    IGA, R
    YAMADA, T
    YASAKA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (2B): : L286 - L288
  • [9] A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY
    WAKE, D
    LIVINGSTONE, AW
    ANDREWS, DA
    DAVIES, GJ
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 285 - 287
  • [10] ALLOY CLUSTERING AND DEFECT STRUCTURE IN THE MOLECULAR-BEAM EPITAXY OF IN0.53GA0.47AS ON SILICON
    GEORGAKILAS, A
    DIMOULAS, A
    CHRISTOU, A
    STOEMENOS, J
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (08) : 2194 - 2204