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- [1] MANGANESE AND GERMANIUM REDISTRIBUTION IN IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 178 - 181
- [5] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58
- [6] GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 757 - 761
- [7] CHARACTERISTICS OF AN IN0.53GA0.47AS VERY SHALLOW JUNCTION GATE STRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY ELECTRON DEVICE LETTERS, 1982, 3 (01): : 15 - 17
- [8] IN0.53GA0.47AS/INP MULTIQUANTUM WELL LASERS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (MOMBE) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (2B): : L286 - L288