A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT

被引：58

作者：

GROTJOHN, T ^{[1
]}

HOEFFLINGER, B ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 02期

关键词：

D O I：

10.1109/T-ED.1984.21507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：234 / 246

页数：13

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