DAMAGE PRODUCTION IN AS IMPLANTED GAAS1-XPX

Post-implantation damage in GaAs1-xPx compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 x 10(13)-8 x 10(13) cm(-2) at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He+ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, Gap) at low temperatures.