SIMPLE FORMULAS GIVING TEMPERATURE PROFILES IN ACTIVE LAYER OF STRIPE-GEOMETRY LASER DIODE WITHOUT OXIDE BARRIERS

被引：2

|

作者：

NAKWASKI, W

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 10期

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D O I：

10.1049/el:19830255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：368 / 370

页数：3

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[1] SIMPLE FORMULAS GIVING THE TEMPERATURE PROFILES IN THE STRIPE-GEOMETRY LASER-DIODES WITH OXIDE BARRIERS
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[2] SIMPLE FORMULA FOR THE THERMAL-RESISTANCE OF A STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE GSAS/(ALGA)AS DIODE-LASER WITHOUT OXIDE BARRIERS
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[3] FINITE-ELEMENT THERMAL-MODEL OF THE OXIDE-ISOLATED STRIPE-GEOMETRY DIODE-LASER
SARZALA, RP
NAKWASKI, W
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