A NEW NONLINEAR RELAXATION SCHEME FOR SOLVING SEMICONDUCTOR-DEVICE EQUATIONS

被引:6
|
作者
BACH, KH [1 ]
DIRKS, HK [1 ]
MEINERZHAGEN, B [1 ]
ENGL, WL [1 ]
机构
[1] AT&T BELL LABS,ALLENTOWN,PA 18103
关键词
D O I
10.1109/43.85764
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In most cases steady-state semiconductor device equations are either solved simultaneously by Newton's method, by Gummel's decoupled nonlinear relaxation scheme, or a combination of both. A framework deriving such different iterative methods from underlying variable transformations is presented. Within that framework the introduction of a new variable establishes a new nonlinear relaxation scheme, which is significantly faster than Gummel's scheme in cases where it converges slowly, thereby avoiding the drawbacks of a simultaneous solution method.
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页码:1175 / 1186
页数:12
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