ELECTRONIC CHARGE-DENSITIES AND THE RECURSION METHOD

被引:34
|
作者
JONES, R
LEWIS, MW
机构
关键词
D O I
10.1080/13642818408246503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:95 / 100
页数:6
相关论文
共 50 条
  • [1] ELECTRONIC CHARGE-DENSITIES IN SEMICONDUCTORS
    KOEN, M
    USPEKHI FIZICHESKIKH NAUK, 1974, 112 (04): : 711 - 724
  • [2] ELECTRONIC CHARGE-DENSITIES IN PBSE AND PBTE
    SCHLUTER, M
    MARTINEZ, G
    COHEN, ML
    PHYSICAL REVIEW B, 1975, 11 (10): : 3808 - 3813
  • [3] COMPARISON OF CHARGE-DENSITIES AND PSEUDO CHARGE-DENSITIES FOR SI2
    MILLER, DJ
    HANEMAN, D
    BAERENDS, EJ
    ROS, P
    PHYSICAL REVIEW LETTERS, 1978, 41 (03) : 197 - 200
  • [4] ELECTRONIC BAND STRUCTURES AND CHARGE-DENSITIES OF NBC AND NBN
    CHADI, DJ
    COHEN, ML
    PHYSICAL REVIEW B, 1974, 10 (02): : 496 - 500
  • [5] MODIFIED ELECTRONIC CHARGE-DENSITIES OF ALKALI BROMIDE CRYSTALS
    DEB, SK
    NEOGY, C
    MANNA, A
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1981, 42 (09) : 761 - 765
  • [6] ELECTRONIC CHARGE-DENSITIES IN SEMICONDUCTING LAYER AND CHAIN STRUCTURES
    MOOSER, E
    SCLUTER, IC
    SCHLUTER, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (09) : 1269 - 1284
  • [7] THEORETICAL DETERMINATION OF ELECTRONIC CHARGE-DENSITIES IN COVALENTLY BONDED SEMICONDUCTORS
    WANG, CS
    KLEIN, BM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1981, 181 (MAR): : 49 - INOR
  • [8] METHOD FOR CALCULATING CHARGE-DENSITIES IN IMPURITIES AND DISORDERED ALLOYS
    CHEN, AB
    FROMHOLD, AT
    PHYSICAL REVIEW B, 1978, 18 (12): : 6450 - 6453
  • [9] RELIABILITY OF PSEUDOPOTENTIAL CHARGE-DENSITIES
    SCHLUTER, M
    KERKER, G
    HO, KM
    COHEN, ML
    ZUNGER, A
    PHYSICAL REVIEW LETTERS, 1979, 42 (08) : 540 - 543
  • [10] CALCULATION OF CHARGE-DENSITIES IN CRYSTALS
    NEWMAN, DJ
    PHYSICS LETTERS A, 1974, A 47 (05) : 425 - 426