MODELING OF YB3+-SENSITIZED ER3+-DOPED SILICA WAVE-GUIDE AMPLIFIERS

被引：44
|
作者：
LESTER, C
BJARKLEV, A
RASMUSSEN, T
DINESEN, PG
机构：
[1] Center for Broadband Telecommunications, Electromagnetics Institute, Technical University of Denmark
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1995年 / 13卷 / 05期
关键词：
D O I：
10.1109/50.387791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model for Yb3+ sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths between 860 and 995 mn, the amplified spontaneous emission in the ytterbium-band is found to reduce both the gain and the optimum length of the amplifier significantly. The achievable gain of the Yb3+-sensitized amplifier is found to be higher than in an Er3+-doped silica waveguide without Yb3+ (18 dB versus 9 dB for a pump power of 100 mW). However, it is important to optimize the Yb-concentration according to the choice of pump wavelength.
引用
收藏
页码：740 / 743
页数：4
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