REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES

被引：98
|
作者：
RICHARD, PD [1 ]
MARKUNAS, RJ [1 ]
LUCOVSKY, G [1 ]
FOUNTAIN, GG [1 ]
MANSOUR, AN [1 ]
TSU, DV [1 ]
机构：
[1] RES TRIANGLE INST,RES TRIANGLE PK,NC
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词：
D O I：
10.1116/1.573334
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：867 / 872
页数：6
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