IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS

被引:87
作者
DEARNALEY, G
FREEMAN, JH
GARD, GA
WILKINS, MA
机构
关键词
D O I
10.1139/p68-073
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:587 / +
页数:1
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[1]  
ANAND KV, 1965, THESIS U MANCHESTER
[2]   DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J].
BOWER, RW ;
BARON, R ;
MAYER, JW ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1966, 9 (05) :203-&
[3]   RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].
DAVIES, JA ;
BROWN, F ;
BALL, GC ;
DOMEIJ, B .
CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&
[4]   ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J].
DAVIES, JA ;
JESPERSGARD, P .
CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1631-+
[5]   CRYSTAL WAFER ORIENTATION BY PROTON CHANNELLING [J].
DEARNALEY, G ;
WILKINS, MA .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1967, 44 (10) :880-+
[6]  
DEARNALEY G, TO BE PUBLISHED
[7]   ANOMALOUS PENETRATION OF HEAVY IONS OF KEV ENERGIES IN MONOCRYSTALLINE TUNGSTEN [J].
DOMEIJ, B ;
BROWN, F ;
KORNELSEN, EV ;
DAVIES, JA ;
PIERCY, GR .
PHYSICAL REVIEW LETTERS, 1964, 12 (13) :363-&
[8]   IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T) [J].
GIBBONS, JF ;
ELHOSHY, A ;
MANCHESTER, KE ;
VOGEL, FL .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :46-+
[9]   EFFECT OF TEMPERATURE ON PENETRATION OF HEAVY KEV IONS IN MONOCRYSTALLINE SOLIDS .2. VARIOUS IONS IN GOLD ALUMINIUM AND TUNGSTEN [J].
HOWE, LM ;
CHANNING, DA .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (08) :2467-&
[10]   PENETRATION OF HEAVY IONS OF KEV ENERGIES INTO MONOCRYSTALLINE TUNGSTEN [J].
KORNELSEN, EV ;
PIERCY, GR ;
BROWN, F ;
DOMEIJ, B ;
DAVIES, JA .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A) :A849-&