ELECTRONIC-STRUCTURE OF HIGH-PRESSURE PHASE OF AIN

被引:34
|
作者
PANDEY, R
SUTJIANTO, A
SEEL, M
JAFFE, JE
机构
[1] Physics Department, Michigan Technological University, Houghton
[2] Battelle—Pacific Northwest Laboratories, Richland, Washington 99352, P.O. Box 999
关键词
D O I
10.1557/JMR.1993.1922
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of ab initio Hartree-Fock calculations for the electronic structure of aluminum nitride in the (high-pressure) rocksalt phase are reported. In the rocksalt phase, the calculated lattice constant is 3.982 angstrom with the bulk modulus of 329 GPa. The band structure is predicted to be indirect at the X point with a gap of 8.9 eV. In this phase, the bonding is shown to be essentially ionic between Al and N. The direct gap shows a stronger linear dependence on pressure with a pressure derivative of 68 meV/GPa compared to that of the indirect gap with a pressure derivative of 31.7 meV/GPa.
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页码:1922 / 1927
页数:6
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