CURRENT TRANSPORT MECHANISM IN N-P-N GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0

作者：

MORGAN, DV

REZAZADEH, AA

机构：

[1] UMIST, Cardiff, Wales, UMIST, Cardiff, Wales

来源：

GEC JOURNAL OF RESEARCH | 1988年 / 6卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 43

页数：7

共 50 条

[1] MICROWAVE PERFORMANCES OF N-P-N AND P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
BAYRAKTAROGLU, B
CAMILLERI, N
LAMBERT, SA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (12) : 1869 - 1873
[2] DESIGN OF N-P-N ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
CHEN, CZ
LEE, SC
LIN, HH
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3976 - 3979
[3] LOW-FREQUENCY NOISE PROPERTIES OF N-P-N ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
COSTA, D
HARRIS, JS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2383 - 2394
[4] INVESTIGATION OF BIPOLAR-TRANSISTORS BASED ON N-P-N ALGAAS-GAAS HETEROSTRUCTURES
DANILCHENKO, VG
RAKHIMOV, N
RUSSU, VV
SULIMA, OV
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[5] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED
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DAPKUS, PD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 367 - 377
[6] 1/F NOISE IN N-P-N GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - IMPACT OF INTRINSIC TRANSISTOR AND PARASITIC SERIES RESISTANCES
KLEINPENNING, TGM
HOLDEN, AJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (06) : 1148 - 1153
[7] CURRENT TRANSPORT MECHANISM IN GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIU, W
FAN, SK
KIM, TS
BEAM, EA
DAVITO, DB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1378 - 1383
[8] MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS
KURATA, M
YOSHIDA, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 467 - 473
[9] SURFACE RECOMBINATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
YUAN, JS
SOLID-STATE ELECTRONICS, 1992, 35 (06) : 805 - 813
[10] A COMPARISON OF BASE CURRENT REVERSAL AND BIPOLAR SNAPBACK IN ADVANCED N-P-N BIPOLAR-TRANSISTORS
HAYDEN, JD
BURNETT, D
NANGLE, J
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 407 - 409

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