RADIATION-INDUCED CHANGES IN FLOATING BODY PHENOMENA IN SOI MOSFETS

被引：1
|
作者：
OUISSE, T [1 ]
GHIBAUDO, G [1 ]
BRINI, J [1 ]
CRISTOLOVEANU, S [1 ]
BOREL, G [1 ]
机构：
[1] ECOLE NATL SUPER ELECTR & RADIOELECT,LPCS,F-38016 GRENOBLE,FRANCE
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 03期
关键词：
MOSFET devices - Silicon on insulator technology - X rays;
D O I：
10.1109/23.277520
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model and experimental results are proposed to account for the floating body effects in Silicon-On-Insulator (SOI) MOSFET's. It is shown both theoretically and experimentally that an Sol MOSFET may exhibit simultaneously a negative conductance and a negative transconductance. The evolution of these effects under an X-ray exposure is studied and described in detail.
引用
收藏
页码：372 / 375
页数：4
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