INFLUENCE OF V/III MOLAR RATIO ON DEEP TRAPS IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INALAS LAYERS

被引：3
|
作者：
NARITSUKA, S
NODA, T
WAGAI, A
FUJITA, S
ASHIZAWA, Y
机构：
[1] Research and Development Center, Toshiba Corporation, Kawasaki, 210
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 7A期
关键词：
METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); INALAS; V/III MOLAR RATIO; OXYGEN IMPURITY; TRIMETHYLALUMINUM (TMA); DEEP TRAPS; DEEP DONORS;
D O I：
10.1143/JJAP.32.L925
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The V/III molar ratio dependence of deep traps in InAlAs layers grown by metalorganic chemical vapor deposition is studied. Three kinds of deep traps-A (0.7 eV), B (0.5 eV), and C (0.07 eV)-are observed and their concentrations decrease drastically with increasing V/III molar ratio. The concentrations of these traps are also affected by the purity of the trimethylaluminum source. Trap A concentration and donor concentration show strong correlation with the oxygen concentration. This indicates that oxygen is the most probable candidate not only for trap A but also for deep donors.
引用
收藏
页码：L925 / L927
页数：3
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