DEEP LEVELS PROFILE IN NEUTRON-IRRADIATED SILICON DETECTORS

被引：1
|
作者：
BIGGERI, U [1 ]
BORCHI, E [1 ]
BRUZZI, M [1 ]
LAZANU, S [1 ]
机构：
[1] INST ATOM PHYS,BUCHAREST,ROMANIA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 360卷 / 1-2期
关键词：
D O I：
10.1016/0168-9002(94)01711-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Measurements of radiation induced defects for high resistivity silicon detectors irradiated with fast neutrons have been performed using the Thermally Stimulated Current technique approximately one year self annealing after the irradiation. Energy levels inside the band gap and trap concentrations have been measured at different depletion depths to analyse the defect profile inside the silicon bulk. Up to 17 traps have been observed, which energy levels seem to be independent on the depth inside the bulk. The concentration of the deeper levels have found to increase by measuring deeply inside the junction.
引用
收藏
页码：134 / 136
页数：3
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