CONTROLLED BARRIER HEIGHT INP SCHOTTKY DIODES PREPARED BY SULFUR DIFFUSION

被引：9
|
作者：
COLEMAN, JJ [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 04期
关键词：
D O I：
10.1063/1.89663
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：283 / 285
页数：3
相关论文
共 50 条
  • [1] BARRIER HEIGHT OF INP SCHOTTKY DIODES PREPARED BY MEANS OF UV OXIDATION
    NAKAMURA, J
    NIU, H
    KISHINO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 699 - 703
  • [2] Barrier height of InP Schottky diodes prepared by means of UV oxidation
    Nakamura, Junichi, 1600, (32):
  • [3] BARRIER HEIGHT STUDY ON AU-INP SCHOTTKY DIODES
    HESS, JM
    NGUYEN, PH
    LEPLEY, B
    RAVELET, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (01): : K55 - K59
  • [4] Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
    Asubay, S.
    Gullu, O.
    Turut, A.
    VACUUM, 2009, 83 (12) : 1470 - 1474
  • [5] MATERIAL REACTIONS AND BARRIER HEIGHT VARIATIONS IN SINTERED AL-INP SCHOTTKY DIODES
    CHRISTOU, A
    ANDERSON, WT
    SOLID-STATE ELECTRONICS, 1979, 22 (10) : 857 - 863
  • [6] Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes
    Cimilli, F. E.
    Saglam, M.
    Tueruet, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 851 - 854
  • [7] The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
    Leroy, WP
    Opsomer, K
    Forment, S
    Van Meirhaeghe, RL
    SOLID-STATE ELECTRONICS, 2005, 49 (06) : 878 - 883
  • [8] INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT
    WADA, O
    MAJERFELD, A
    ROBSON, PN
    SOLID-STATE ELECTRONICS, 1982, 25 (05) : 381 - 387
  • [9] A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InP
    Varenne, C.
    Brunet, J.
    Pauly, A.
    Lauron, B.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) : 1082 - 1086
  • [10] INTERFACE STATES AND THE BARRIER HEIGHT OF SCHOTTKY DIODES
    WITTMER, M
    FREEOUF, JL
    PHYSICS LETTERS A, 1993, 173 (02) : 190 - 194
12345