X-RAY-DIFFRACTION STUDIES OF ANNEALED CZOCHRALSKI-GROWN SILICON .2. TRIPLE-CRYSTAL DIFFRACTOMETRY

This paper reports a series of X-ray triple-crystal diffractometry (TCD) measurements performed on annealed Czochralski-grown silicon (ACS) single crystals to investigate in more detail the reasons for the observed broadening of double-crystal diffractometer rocking curves described in the previous paper [Joksch, Zaumseil & Zulehner (1993). J. Appl. Cryst. 26, 185-191]. It is shown that diffuse scattering by structural defects created during the high-temperature heat treatment is responsible for the changes in the reflection properties. With TCD, the dominant defects are identified as stacking faults on (111) planes.