CORE-ELECTRON EXCITATION-SPECTRA OF SI, SIO, AND SIO2

被引：72

作者：

KOMA, A ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.35.107

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：107 / 110

页数：4

共 22 条

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[2]

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[6] POTENTIAL CURVES FOR VALENCE-EXCITED STATES OF SILICON MONOXIDE - THEORETICAL STUDY [J].

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[7]

HOLLINGER G, 1974, TETRAHEDRALLY BONDED, P102

[8] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 10 (02) :710-718

[9] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[10] DETERMINATION OF OPTICAL INTERBAND TRANSITIONS IN CRYSTALLINE QUARTZ FROM X-RAY SPECTROSCOPICAL DATA [J].

KLEIN, G ;

CHUN, HU .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 49 (01) :167-&

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