A Compact Two Dimensional Analytical Modeling of Nanoscale Fully Depleted Dual Material Gate Strained SOI/SON MOSFETs for Subdued SCEs

In this work, a two dimensional analytical model of a fully depleted nano-scale Dual Material Gate (DMG) SON MOSFET has been developed and overall performance comparison is made with an equivalent SOI MOSFET structure. The use of a dual material in the gate of the DMG structure in a fully depleted SON MOSFET leads to reduced short channel effects due to a step-function in the surface potential profile. The threshold voltage model based current voltage calculations incorporates the effects of velocity saturation and channel length modulation to provide a better understanding of the short channel behavior of our proposed device. The DMG SON MOSFET with strained silicon channel presented in this work proves to be superior to its SOI counterpart as it exhibits lower threshold voltage roll-off due to its inherent immunity to various short channel effects which effectively increases its current drivability thereby enhancing device scalability and providing scope for further device miniaturization for better device performance.