ELECTRICAL TRANSPORT-PROPERTIES OF LUVO4 SINGLE-CRYSTAL

被引:2
|
作者
PANDIT, AK
SINGH, RS
WANKLYN, BM
SINGH, RA
机构
[1] Department of Physics, University of Gorakhpur, Gorakhpur
关键词
D O I
10.1016/0254-0584(91)90096-D
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A.c. and d.c. conductivities, thermoelectric power and the dielectric constant of the LuVO4 single crystal in the temperature range 300-1000 K have been studied. LuVO4 is found to be a n-type semiconductor with energy band gap 2.2 eV. It exhibits an extrinsic nature up to 650 K and an intrinsic nature above it. The thermoelectric power increases with temperature in the region 300-650 K whereas it decreases with temperature in the region 650-1000 K. The dielectric constant increases with temperature in the entire temperature range studied with a rapid increase starting at T approximately 675 K.
引用
收藏
页码:121 / 126
页数:6
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