OBSERVATION OF OXYGEN IMPURITIES IN SINGLE-CRYSTAL SILICON BY MEANS OF INTERNAL-FRICTION

被引：4
|
作者：
LAM, CC
DOUGLASS, DH
机构：
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1981年 / 44卷 / 3-4期
关键词：
D O I：
10.1007/BF00120776
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：259 / 264
页数：6
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