AMORPHOUS METAL-SEMICONDUCTOR CONTACTS FOR HIGH-TEMPERATURE ELECTRONICS .2. THERMAL-STABILITY OF SCHOTTKY-BARRIER CHARACTERISTICS

被引：6

|

作者：

WICKENDEN, DK

SISSON, MJ

TODD, AG

KELLY, MJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 06期

关键词：

D O I：

10.1016/0038-1101(84)90180-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：515 / 518

页数：4

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