INGAASP/GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY

被引：1
|
作者：
BOLKHOVITYANOV, YB
JAROSHEVICH, AS
NOMEROTSKY, NV
REVENKO, MA
TRUKHANOV, EM
机构：
[1] Institute of Semiconductor Physics
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 17期
关键词：
D O I：
10.1063/1.114616
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly elastically strained films of InGaAsP solid solutions in 1.4-1.8 eV interval of band gaps were grown on GaAs(111)B substrates by liquid phase epitaxy. Elastic strains close to 1% are achieved. The determined critical thicknesses exceed the predictions of the energy equilibrium theory by Matthews and Blakeslee by as much as an order of magnitude. (C) 1995 American Institute of Physics.
引用
收藏
页码：2486 / 2487
页数：2
相关论文
共 50 条
  • [1] InGaAsP/GaAs elastically strained films grown by liquid phase epitaxy
    Bolkhovityanov, YB
    Alperovich, VL
    Jaroshevich, AS
    Revenko, MA
    Scheibler, HE
    Terekhov, AS
    Trukhanov, EM
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 263 - 266
  • [2] LIQUID-PHASE EPITAXY OF INGAASP SOLID-SOLUTIONS ON PROFILED (100) INP SUBSTRATES
    DVORYANKIN, VF
    KAEVITSER, LR
    KOMAROV, AA
    TELEGIN, AA
    KHUSID, LB
    CHERNUSHICH, MD
    INORGANIC MATERIALS, 1990, 26 (05) : 764 - 766
  • [3] DOPING OF SOLID-SOLUTIONS AT THE LIQUID-PHASE EPITAXY
    VILISOV, AA
    GERMOGENOV, VP
    MAKSIMOVA, NK
    EPIKTETOVA, LE
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1980, (04): : 19 - 25
  • [4] INGAASP SUPERLATTICES GROWN BY LIQUID-PHASE EPITAXY
    BENCHIMOL, JL
    SLEMPKES, S
    NGUYEN, DC
    LEROUX, G
    BRESSE, JF
    PRIMOT, J
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4068 - 4072
  • [5] HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY
    COOK, LW
    TASHIMA, MM
    TABATABAIE, N
    LOW, TS
    STILLMAN, GE
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 475 - 484
  • [6] ERBIUM DOPING IN INGAASP GROWN BY LIQUID-PHASE EPITAXY
    WU, MC
    CHEN, EH
    CHIN, TS
    TU, YK
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 456 - 461
  • [7] DOPING OF SOLID-SOLUTIONS DURING LIQUID-PHASE EPITAXY .1.
    VILISOV, AA
    GERMOGENOV, VP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (07): : 10 - 14
  • [8] Influence of segregation on the composition of GaAs1-xSbx solid solutions grown by liquid-phase epitaxy
    Biryulin, YF
    SEMICONDUCTORS, 2002, 36 (12) : 1323 - 1325
  • [9] Influence of segregation on the composition of GaAs1−xSbx solid solutions grown by liquid-phase epitaxy
    Yu. F. Biryulin
    Semiconductors, 2002, 36 : 1323 - 1325
  • [10] FORMATION OF TRANSITION LAYERS IN HETEROSTRUCTURES BASED ON GAAS-ALAS SOLID-SOLUTIONS DURING THE LIQUID-PHASE EPITAXY
    ALFEROV, ZI
    BER, BY
    GARBUZOV, DZ
    KIZHAEV, KY
    KRASOVSKII, VV
    NIKISHIN, SA
    SINYAVSKII, DV
    ULIN, VP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 12 (06): : 335 - 341
12345