EVIDENCE OF GAIN ENHANCEMENT IN LONG WAVELENGTH STRAINED QUANTUM-WELL LASER-DIODES

被引：12
|
作者：
OSINSKI, JS
GRODZINSKI, P
ZOU, Y
DAPKUS, PD
机构：
[1] Center for Photonic Technology, Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 05期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19910295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Threshold current behaviour of InGaAs/InP quantum well laser diodes grown by atmospheric pressure MOCVD is measured and used as a means for determining characteristic modal gain constants. Structures incorporating 1.1% strain in the multiquantum well active region exhibit a threshold current density of 506 A/cm2 at a cavity length of 1498-mu-m, and are described by a characteristic modal gain constant that is 70% higher than in a similar device with 0.2% strain.
引用
收藏
页码：469 / 470
页数：2
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