GROWTH OF INP, GAP, AND GAINP BY CHEMICAL BEAM EPITAXY USING ALTERNATIVE SOURCES

被引：0
|
作者：
RYU, HH
KIM, CW
SADWICK, LP
STRINGFELLOW, GB
GEDRIDGE, RW
JONES, AC
机构：
[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
[2] USN,CTR AIR WARFARE,DIV WEAP,CHINA LAKE,CA 93555
[3] EPICHEM LTD,WIRRAL L623QF,MERSEYSIDE,ENGLAND
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This paper reports the growth of indium phosphide (InP), gallium phosphide (GaP), and gallium indium phosphide (GaInP) by chemical beam epitaxy (CBE) using alternative group III and V precursors. For the work reported here, ethyldimethylindium (EDMIn) and triispropylgallium (TIPGa) were used as the In and Ga precursors, respectively, in conjunction with three alternative phosphorous (P)-sources: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE), and trisdimethylaminophosphine (TDMAP). We also report for the first time the growth of GaInP by CBE without precracking the group V source using TIPGa, EDMIn, and TDMAP.
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页码：63 / 68
页数：6
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