ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD

被引：512

作者：

CARDONA, M

POLLAK, FH

机构：

来源：

PHYSICAL REVIEW | 1966年 / 142卷 / 02期

关键词：

D O I：

10.1103/PhysRev.142.530

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：530 / &

共 27 条

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[6]

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[9] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

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