STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES

被引：117
作者：
ESTRUP, PJ
MORRISON, J
机构：
来源：
SURFACE SCIENCE | 1964年 / 2卷
关键词：
D O I：
10.1016/0039-6028(64)90088-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：465 / 472
页数：8
相关论文
共 9 条
[1]   P-LAYERS ON VACUUM HEATED SILICON [J].
ALLEN, FG ;
BUCK, TM ;
LAW, JT .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :979-985
[2]   STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&
[3]   SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J].
LANDER, JJ ;
MORRISON, J .
SURFACE SCIENCE, 1964, 2 :553-565
[4]   STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].
LANDER, JJ ;
GOBELL, GW ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+
[5]   SCATTERING FACTORS AND OTHER PROPERTIES OF LOW-ENERGY ELECTRON DIFFRACTION [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3517-&
[6]  
MCRAE EG, UNPUB
[7]   ELECTRICAL CONDUCTION MECHANISM IN ULTRATHIN, EVAPORATED METAL FILMS [J].
NEUGEBAUER, CA ;
WEBB, MB .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :74-&
[8]   THE MEAN FREE PATH OF ELECTRONS IN METALS [J].
SONDHEIMER, EH .
ADVANCES IN PHYSICS, 1952, 1 (01) :1-42
[9]   VOCABULARY OF SURFACE CRYSTALLOGRAPHY [J].
WOOD, EA .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1306-&
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