DIRECT ION-IMPLANTATION AND RADIATION ENHANCED DIFFUSION OF TIN INTO IRON

被引:8
|
作者
DIONISIO, PH
SCHERER, C
TEIXEIRA, SR
BAUMVOL, IJR
机构
关键词
D O I
10.1016/0168-583X(86)90094-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:345 / 354
页数:10
相关论文
共 50 条
  • [1] DIRECT ION IMPLANTATION AND RADIATION ENHANCED DIFFUSION OF TIN INTO IRON.
    Dionisio, P.H.
    Scherer, C.
    Teixeira, S.R.
    Baumvol, I.J.R.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B16 (4-5): : 345 - 354
  • [2] COMPARATIVE-STUDY OF INTERMETALLIC PHASES FORMED BY DIRECT ION-IMPLANTATION AND RADIATION ENHANCED DIFFUSION OF TIN IN 2 KINDS OF STEEL
    DIONISIO, PH
    DEBARROS, BAS
    BAUMVOL, IJR
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 773 - 778
  • [3] RADIATION-ENHANCED DIFFUSION OF BORON IN GERMANIUM DURING ION-IMPLANTATION
    GUSEVA, MI
    MANSUROVA, AN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1973, 20 (03): : 207 - 210
  • [4] THE INFLUENCE OF TIN ION-IMPLANTATION AND RADIATION-ENHANCED TIN DIFFUSION ON THE THERMAL-OXIDATION OF A HIGH-CARBON STEEL
    DIONISIO, PH
    BAUMVOL, IJR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 101 (01): : 63 - 76
  • [5] RADIATION-ENHANCED DIFFUSION DURING HIGH-TEMPERATURE ION-IMPLANTATION
    SCHORK, R
    PICHLER, P
    KLUGE, A
    RYSSEL, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 499 - 503
  • [6] RADIATION ENHANCED OUTDIFFUSION DURING ION-IMPLANTATION
    ANTTILA, A
    HAUTALA, M
    APPLIED PHYSICS, 1979, 19 (02): : 199 - 203
  • [7] RADIATION-INDUCED DIFFUSION DURING ION-IMPLANTATION
    KERKOW, H
    HOLLDACK, K
    MERTENS, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 68 (1-4): : 389 - 393
  • [8] IONIZATION-ENHANCED DIFFUSION - ION-IMPLANTATION IN SEMICONDUCTORS
    BOURGOIN, J
    PEAK, D
    CORBETT, JW
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3022 - 3027
  • [9] ION-IMPLANTATION AND PROTON-ENHANCED DIFFUSION IN SEMICONDUCTORS
    GIBBONS, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 475 - 475
  • [10] ION-IMPLANTATION AND PROTON-ENHANCED DIFFUSION IN SEMICONDUCTORS
    GIBBONS, JF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1975, 170 (AUG24): : 29 - 29