New approach to the manufacturing of power microwave bipolar transistors: A computer simulation

被引：0
|
作者：
Snitovsky Yu.P. [1 ]
Nelayev V.V. [1 ]
Efremov V.A. [1 ]
机构：
[1] Belarussian State University, Minsk
来源：
Russ. Microelectr. | 2007年 / 6卷 / 409-414期
关键词：
Computer simulation - Hardness - Microwaves - Natural frequencies - Power electronics - Radiation;
D O I：
10.1134/S106373970706008X
中图分类号：
学科分类号：
摘要：
A new manufacturing technology for power microwave silicon npn transistors is evaluated by 2D computer simulation in Silvaco's SSUPREM4. It enables one to increase the effective emitter area, which makes for better power-handling and frequency capabilities, radiation hardness, and common-emitter output characteristics. Advantages of the new technology over the standard one are demonstrated. © 2007 Pleiades Publishing, Ltd.
引用
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页码：409 / 414
页数：5
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