Electric field gradient and atomic position for Se in MoSe2

被引：2
|
作者：
Haas, H. [1 ]
Forkel-Wirth, D. [2 ]
Blaha, P. [3 ]
机构：
[1] Bereich F, Hahn-Meitner-Institut Berlin, D-14109 Berlin, Germany
[2] TIS-Division, CERN, CH-1211 Geneva 23, Switzerland
[3] Inst. für Tech. Elektrochemie, TU Wien, A-1060 Vienna, Austria
来源：
Hyperfine Interactions | 1999年 / 120-121卷 / 1-8期
关键词：
Atomic Position; Internal Parameter; Nuclear Quadrupole Interaction; Nuclear Quadrupole Moment; Single Crystal Plate;
D O I：
10.1023/A:1017041321549
中图分类号：
学科分类号：
摘要：
We have measured the nuclear quadrupole interaction at 77Se in the layer compound semiconductor MoSe2 by γ–γ PAC in the decay of 77Br following implantation. The FLAPW procedure was used to calculate the efg and the internal lattice parameter. Good agreement with the experimental result, 99 V/Å2, was found.
引用
收藏
页码：423 / 426
页数：3
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