Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

被引：0
|
作者：
Gabriel Leonardo Nogueira
Maiza da Silva Ozório
Marcelo Marques da Silva
Rogério Miranda Morais
Neri Alves
机构：
[1] São Paulo State University (UNESP),School of Technology and Applied Sciences
来源：
Electronic Materials Letters | 2018年 / 14卷
关键词：
Vertical transistor; Permeable electrode; AL; O; /PMMA; Thermal evaporation;
D O I：
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学科分类号：
摘要：
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页码：319 / 327
页数：8
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