A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

N-type high resistivity (HR) magnetic Czochralski (MCz) silicon wafers are hydrogenated via direct hydrogen plasma exposures at 270 °C. After the hydrogenation, isochronal annealing and isothermal annealing are carried out up to 450 °C. Deep Level Transient Spectroscopy (DLTS) measurement is used to study the deep levels created in the hydrogenated MCz silicon samples. Up to 9 kinds of deep levels are detected. The diffusion-like concentration profiles suggest a clear role of hydrogen in the formation of some defects. A considerable amount of oxygen thermal donors (OTD) is also observed in the hydrogenated samples even after annealing. The formation of the deep levels suggests that care should be taken for some application using the MCz silicon as a HR material.