On the temperature dependence of the dc conductivity of a semiconductor quantum wire in an insulator

被引：0
|
作者：
N. A. Poklonskii
E. F. Kislyakov
S. A. Vyrko
机构：
[1] Belarussian State University,
来源：
Semiconductors | 2003年 / 37卷
关键词：
Relaxation Time; Charge Carrier; Magnetic Material; Carrier Concentration; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The dc resistivity of a semiconductor quantum wire in an insulator host matrix, caused by the interaction between charge carriers and longitudinal acoustic phonons of the host, is considered. Based on an approximation of the relaxation time, simple analytical expressions for calculating the conductivity were derived for the case of a nondegenerate gas of carriers in a quantum wire. If the carrier concentration is independent of temperature, the wire resistivity increases with temperature as T5/2, i.e., more steeply than in a bulk covalent semiconductor.
引用
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页码：710 / 712
页数：2
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