Theoretical study of band gap engineering and optical absorption in InGaN/GaN superlattices with short periodicity

We have carried out a theoretical study for calculating the electronic and optical properties of InxGa1-xN/GaN\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ {\text{In}}_{x} {\text{Ga}}_{1 - x} {\text{N}}/{\text{GaN}} $$\end{document}(001) superlattices with short periodicity, while In composition is altered from 0 to 100 %. These appealing systems have been simulated using ab initio method in the framework of full-potential linearized augmented plane wave scheme. In this respect, a modified Becke–Johnson for the exchange and correlation potential term is included for describing adequately the energy gap of these promising low-dimensional materials. Exclusively, we computed the density of states, imaginary part of dielectric function, refractive index and absorption coefficient. However, it is viable to control the optical properties of these superlattices which may be useful for optoelectronic devices application.