High-resolution analytical electron microscopy of catalytically etched silicon nanowires

被引：0
|
作者：
M. Schade
N. Geyer
B. Fuhrmann
F. Heyroth
H. S. Leipner
机构：
[1] Martin-Luther-Universität Halle-Wittenberg,Interdisziplinäres Zentrum für Materialwissenschaften
来源：
Applied Physics A | 2009年 / 95卷
关键词：
61.46.Km; 68.37.Ma; 82.45.Vp;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiOx with x≤2.
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页码：325 / 327
页数：2
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