Dielectric Response;
Thick Solid Line;
Electron Density Profile;
Accumulation Layer;
Fermi Atom;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
This mini-review is dedicated to the 85th birthday of Prof. L.V. Keldysh, from whom we have learned so much. In this paper, we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO3 (STO) in the cases of planar, spherical, and cylindrical geometries. The electron gas can be created by applying an induction D0 to the STO surface. We describe the lattice dielectric response of STO using the Landau–Ginzburg free energy expansion and employ the Thomas–Fermi (TF) approximation for the electron gas. For the planar geometry, we arrive at the electron density profile n(x) ∝ (x + d)–12/7, where d ∝ D0–12/7. We extend our results to overlapping electron gases in GTO/STO/GTO heterojunctions and electron gases created by spill-out from NSTO (heavily n-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with a nuclear charge Ze where Z > 170, electrons collapse onto the nucleus, resulting in a net charge Zn < Z. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius R when its total charge number Z exceeds the critical value Zc ≈ R/a, where a is the lattice constant. The net charge eZn grows with Z until Z exceeds Z* ≈ (R/a)9/7. After this point, the charge number of the compact core Zn remains ≈ Z*, with the rest Z* electrons forming a sparse TF atom with it. We extend our studies of collapse to the case of long cylindrical clusters as well.
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Rebec, Slavko N.
Jia, Tao
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
Stanford Univ, Dept Phys, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Jia, Tao
Sohail, Hafiz M.
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Sohail, Hafiz M.
Hashimoto, Makoto
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Hashimoto, Makoto
Lu, Donghui
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Lu, Donghui
Shen, Zhi-Xun
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
Stanford Univ, Dept Phys, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Shen, Zhi-Xun
Moore, Robert G.
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
机构:
Sharif Univ Technol, Dept Phys, Tehran 1458889694, Iran
Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, IranSharif Univ Technol, Dept Phys, Tehran 1458889694, Iran
Faridi, A.
Asgari, Reza
论文数: 0引用数: 0
h-index: 0
机构:
Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, Iran
Inst Res Fundamental Sci IPM, Sch Nano Sci, Tehran 193955531, IranSharif Univ Technol, Dept Phys, Tehran 1458889694, Iran