InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

被引：0
|
作者：
Xu X. [1 ]
Cui D. [1 ]
Tang Z. [1 ]
Hao X. [1 ]
Heime K. [2 ]
机构：
[1] Stt. Key Lab. of Crystal Materials, Shandong University
[2] Institut f�r Halbleitertechnik, Shandong University
来源：
Science in China Series A: Mathematics | 2002年 / 45卷 / 5期
基金：
中国国家自然科学基金;
关键词：
InGaAs/InP; MOVPE; Strain; TBAs; TBP;
D O I：
10.1360/02ys9071
中图分类号：
学科分类号：
摘要：
Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/InP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases, and a blue shift of photoluminescence (PL) peak energy and narrowing in PL width are obtained.
引用
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页码：655 / 660
页数：5
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