Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dots

被引:0
|
作者
J. N. Isaia
L. A. de Vaulchier
S. Hameau
R. Ferreira
Y. Guldner
E. Deleporte
J. Zeman
V. Thierry-Mieg
J. M. Gérard
机构
[1] École Normale Supérieure,Laboratoire de Physique de la Matiére Condensée
[2] CNRS/MPI,Grenoble High Magnetic Field Laboratory
[3] Laboratoire de Photonique et Nanostructures,undefined
关键词
Magnetic Field; Theoretical Calculation; Doping Level; Population Fluctuation; Size Dispersion;
D O I
暂无
中图分类号
学科分类号
摘要
We investigate the FIR magneto-optical transitions in doped self-assembled InAs quantum dots with an average filling ranging from 0.6 to 6 electrons per dot. Significant changes in the magnetic field dispersion, the line-width and the amplitude of the transitions are observed as the doping level is varied, in agreement with our theoretical calculations. We show that our technique is an effective tool to obtain informations regarding the dot size homogeneity and the electron filling uniformity.
引用
收藏
页码:209 / 216
页数:7
相关论文
共 50 条
  • [1] Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dots
    Isaia, JN
    de Vaulchier, LA
    Hameau, S
    Ferreira, R
    Guldner, Y
    Deleporte, E
    Zeman, J
    Thierry-Mieg, V
    Gérard, JM
    EUROPEAN PHYSICAL JOURNAL B, 2003, 35 (02): : 209 - 216
  • [2] Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dots
    Isaia, JN
    de Vaulchier, LA
    Hameau, S
    Ferreira, R
    Deleporte, E
    Guldner, Y
    Zeman, J
    Thierry-Mieg, V
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 86 - 88
  • [3] Far-infrared spectroscopy of CdTe/ZnTe self-assembled quantum dots
    Romcevic, N.
    Romcevic, M.
    Kostic, R.
    Stojanovic, D.
    Milutinovic, A.
    Karczewski, G.
    Galazka, R.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 481 (1-2) : 6 - 9
  • [4] Far-infrared and capacitance spectroscopy of self-assembled InAs quantum dots
    Lorke, A
    Fricke, M
    Miller, BT
    Haslinger, M
    Kotthaus, JP
    MedeirosRibeiro, G
    Petroff, PM
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 803 - 808
  • [5] Far-infrared absorption of vertically coupled self-assembled quantum rings
    Climente, JI
    Planelles, J
    PHYSICAL REVIEW B, 2005, 72 (15):
  • [6] Resonant far-infrared laser induced photoluminescence line narrowing in InAs/GaAs self-assembled quantum dots
    Clarke, DG
    Murdin, BN
    Barker, JA
    Findlay, PC
    Pidgeon, CR
    Wells, JPR
    Bradley, IV
    Murray, R
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1305 - 1306
  • [7] Far-infrared absorption of self-assembled semiconductor rings
    Planelles, J
    Climente, JI
    COLLECTION OF CZECHOSLOVAK CHEMICAL COMMUNICATIONS, 2005, 70 (05) : 605 - 620
  • [8] Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots -: art. no. 085316
    Hameau, S
    Isaia, JN
    Guldner, Y
    Deleporte, E
    Verzelen, O
    Ferreira, R
    Bastard, G
    Zeman, J
    Gérard, JM
    PHYSICAL REVIEW B, 2002, 65 (08): : 1 - 10
  • [9] Size control of self-assembled quantum dots
    Johansson, J
    Seifert, W
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 : 566 - 570
  • [10] Infrared photodetection with semiconductor self-assembled quantum dots
    Boucaud, P
    Sauvage, S
    COMPTES RENDUS PHYSIQUE, 2003, 4 (10) : 1133 - 1154